Total Ionizing Dose Hardening of 45 nm FD-SOI MOSFETs Using Body-Tie Biasing

Total Ionizing Dose Hardening of 45 nm FD-SOI MOSFETs Using Body-Tie Biasing

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The total here ionizing dose (TID) effect is a problematic concern in fully depleted silicon-on-insulator (FD-SOI) metal-oxide-semiconductor transistors (MOSFETs) because of the introduction of the thin buried oxide layer.The device performance is degraded by the radiation-induced trapped charges in the oxide, which cause threshold-voltage drifts and OFF-state leakage-current increments.This paper proposes a novel strategy for TID hardening in FD-SOI devices by using body-tie biasing.First, an n-type three-dimensional FD-SOI MOSFET with a gate length of 45 nm is built, and the irradiation-induced charge trapping in the oxide structures is simulated under different bias conditions.The responses of the floating-body FD-SOI devices and the devices with an additional body-tie, to the total dose and interface charges, are simulated and compared.

The results show that the tied-body structure is custom congratulations banner more tolerant to the TID effect than the floating-body structure and that it can endure up to 100 krad of TID irradiation without body-tie biasing.To mitigate the degradation of the tied-body device at high dose levels, body-tie biasing is used, and the “repairing” voltage” at different dose levels is calculated.By applying the “repairing voltage” to the body-tie, the irradiated device can be restored to the pre-irradiation state efficiently.